By Lucia Romano, Vittorio Privitera, Chennupati Jagadish
This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, specializes in defects in semiconductors. Defects in semiconductors support to give an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit in accordance with electric or mechanical fields.
The quantity contains chapters focusing in particular on electron and proton irradiation of silicon, element defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and lots more and plenty extra. it's going to support help scholars and scientists of their experimental and theoretical paths.
- Expert contributors
- Reviews of crucial contemporary literature
- Clear illustrations
- A vast view, together with exam of defects in numerous semiconductors
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Extra resources for Defects in Semiconductors, Volume 91
Status Solidi B 60, 595–603. , 1974. Formation of stacking faults and enhanced diffusion in the oxidation of silicon. J. Appl. Phys. 45, 1567–1573. , 1987. Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlayers. Appl. Phys. Lett. 51, 308–310. , 2004. Atomistic simulations in materials processing. R. ), Predictive Simulation of Semiconductor Processing. Springer Series in Materials Science, vol. 72. pp. 73–109. , 1978. Observation of phosphorus pile-up at the SiO2-Si interface.
Phys. 64, 4484–4490. , 1989. Ion pairing effects on substitutional impurity diffusion in silicon. Appl. Phys. Lett. 54, 703–705. , 2007. Diffusion in a single crystal within a stressed environment. Phys. Rev. Lett. 99, 155903. , 1990a. Transient diffusion of ion-implanted B in Si: dose, time, and matrix dependence of atomic and electrical profiles. J. Appl. Phys. 68, 6191–6198. , 1990b. Impurity diffusion via an intermediate species: the B-Si system. Phys. Rev. Lett. 65, 2434–2437. , 2003. Clusters formation in ultralow-energy high-dose boron-implanted silicon.
J. Electrochem. Soc. 136, 1542–1545. , 1997. Lattice Monte Carlo simulations of vacancy-mediated diffusion and aggregation using ab-initio parameters. S. ), Defects and Diffusion in Silicon Processing. Mat. Res. Soc. Symp. Proc, vol. 469. pp. 353–358. , 1998. The fraction of substitutional boron in silicon during ion implantation and thermal annealing. Appl. Phys. Lett. 72, 2736–2738. , 1988. General model for intrinsic dopant diffusion in silicon under nonequilibrium point-defect conditions. J.
Defects in Semiconductors, Volume 91 by Lucia Romano, Vittorio Privitera, Chennupati Jagadish