By Samar K. Saha
Compact versions for built-in Circuit layout: traditional Transistors and Beyond offers a contemporary treatise on compact types for circuit computer-aided layout (CAD). Written by means of an writer with greater than 25 years of event in semiconductor techniques, units, and circuit CAD, and greater than 10 years of educational event in instructing compact modeling classes, this first-of-its-kind publication on compact SPICE types for very-large-scale-integrated (VLSI) chip layout bargains a balanced presentation of compact modeling the most important for addressing present modeling demanding situations and figuring out new versions for rising devices.
Starting from uncomplicated semiconductor physics and masking state of the art gadget regimes from traditional micron to nanometer, this text:
- Presents typical versions for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), in addition to statistical MOS models
- Discusses the main factor of method variability, which critically affects machine and circuit functionality in complex applied sciences and calls for statistical compact models
- Promotes additional learn of the evolution and improvement of compact versions for VLSI circuit layout and analysis
- Supplies primary and useful wisdom important for effective built-in circuit (IC) layout utilizing nanoscale devices
- Includes workout difficulties on the finish of every bankruptcy and broad references on the finish of the book
Compact versions for built-in Circuit layout: traditional Transistors and Beyond
is meant for senior undergraduate and graduate classes in electric and electronics engineering in addition to for researchers and practitioners operating within the quarter of electron units. notwithstanding, even these unusual with semiconductor physics achieve an outstanding seize of compact modeling innovations from this book.
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Extra info for Compact models for integrated circuit design : conventional transistors and beyond
QMEs on the inversion charge density can be handled in a physical manner by a bandgapwidening approach . The development of fs-based Hiroshima University STARC IGFET Model, referred to as the HiSIM, has been started in the early 1990s based on the drift-diffusion concept and proved its feasibility for real applications [66–68]. Since 1993, the model has been successfully applied in the development of dynamic random-access memory (DRAM), subthreshold region ICs, and IC-card products at Siemens.
2, we find that a large number of compact MOSFET models have been developed over the past 40 years and are continued to date. Therefore, it is extremely difficult to generate, maintain, and support a large number of model libraries for a large number of process technologies for circuit CAD by device engineers of a manufacturing company. In order to improve the efficiency of compact modeling for circuit CAD, model developers and users have made a joint effort to establish a standard compact model for each IC device with robustness, accuracy, scalability, and computational efficiency to meet the needs of digital, analog, and mixed analog/digital designs.
The development of fs-based Hiroshima University STARC IGFET Model, referred to as the HiSIM, has been started in the early 1990s based on the drift-diffusion concept and proved its feasibility for real applications [66–68]. Since 1993, the model has been successfully applied in the development of dynamic random-access memory (DRAM), subthreshold region ICs, and IC-card products at Siemens. In HiSIM, the surface potentials are obtained by solving the Poisson’s equation iteratively both at the source side and at the drain side with an accuracy of 10 pV, and simulation speed is comparable to industry standard Vth-based models .
Compact models for integrated circuit design : conventional transistors and beyond by Samar K. Saha