By Yannick Le Tiec

ISBN-10: 1848214367

ISBN-13: 9781848214361

Microelectronics is a fancy global the place many sciences have to collaborate to create nano-objects: we'd like services in electronics, microelectronics, physics, optics and mechanics additionally crossing into chemistry, electrochemistry, in addition to biology, biochemistry and drugs. Chemistry is enthusiastic about many fields from fabrics, chemical substances, gases, drinks or salts, the fundamentals of reactions and equilibrium, to the optimized cleansing of surfaces and selective etching of particular layers. furthermore, over contemporary many years, the scale of the transistors has been greatly lowered whereas the performance of circuits has elevated. This ebook contains 5 chapters overlaying the chemical compounds and sequences utilized in processing, from cleansing to etching, the position and influence in their purity, in addition to the fabrics utilized in “Front finish Of the road” which corresponds to the center and function of person transistors, then relocating directly to the “Back finish Of the road” that's on the topic of the interconnection of all of the transistors. eventually, the necessity for particular functionalization additionally calls for key wisdom on floor remedies and chemical administration to permit new applications.

Contents

1. Chemistry within the “Front finish of the road” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec.
2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis.
3. The Chemistry of rainy floor guidance: cleansing, Etching and Drying, Yannick Le Tiec and Martin Knotter.
4. The Use and administration of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti.
5. floor Functionalization for Micro- and Nanosystems: program to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet.

About the Authors

Yannick Le Tiec is a technical specialist at CEA-Leti, Minatec given that 2002. he's a CEA-Leti assignee at IBM, Albany (NY) to advance the complex 14 nm CMOS node and the FDSOI know-how. He held diversified technical positions from the complex three hundred mm SOI CMOS pilot line to assorted assignments inside of SOITEC for complex wafer improvement and later inside INES to optimize sun phone ramp-up and yield. He has been a part of the ITRS entrance finish technical operating workforce at ITRS on account that 2008.

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Extra resources for Chemistry in Microelectronics

Sample text

May favor the apparition of NiSi2 at lower temperatures (<500°C), thus changing the Chemistry in the FEOL 43 usual process sequence [DHE 88]. Under certain conditions, other phases with nucleation controlled growth have been transiently observed during the thin film formation of nickel silicides: Ni31Si12 [KIT 07], Ni3Si2 [LAV 03] as well as the θ-Ni2Si phase (non-stoichiometric, actually Ni2Si1+x), sometimes mistaken for the Ni3Si2 phase [MAN 09]. 2. Adapting to the constraints of integration Management of the nickel diffusion by two-step annealing.

A “HF-Last” wet cleaning followed by an in situ H2 bake at 650°C and 20 Torr for 2 min (in order to avoid any islanding of the very thin Si starting layer) was used to prepare the surface prior to growth. 3 raised sources and drains ([B] = 2 × 1020 cm−3). This drastically reduces the access resistance of the transistors and to a certain extent, introduces a uniaxial compression in the SiGe channel, increasing the hole mobility. 19). 22. 2/Si} bilayer has a perfect crystallinity (no extended defects; abrupt interfaces).

E. 65785 Å). 66 eV. Mixing Si, Ge and C in a SiGeC alloy will induce strong band-gap modifications; built-in stress will also play a role. Incorporating C by substitution into a Si or Ge matrix is otherwise quite difficult. e. at 1,400°C), with an unfortunate tendency toward SiC precipitates formation at higher concentrations. Si and Ge, however, are miscible in all proportions. During heteroepitaxy, there will be discrepancies between the lattice parameters of the deposited layer and the substrate, which will lead to an accumulation of elastic energy in the layer.

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Chemistry in Microelectronics by Yannick Le Tiec


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